View AS4C32M16SA_9061639.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

AS4C32M16SA version 2.0 512mbit single - data - rate (sdr) sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 1 | p a g e 512mbit single - data - rate (sdr) sdram as4c32m16s a - 7tcn & AS4C32M16SA - 7tin 32mx16 ( 8m x 16 x 4 banks)
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr) sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 2 | p a g e revision history rev. 1.0 march 2012 initial version rev. 1.1 april 2012 revised operating - ; standby - a nd refresh currents rev. 2.0 february 2014 die shrink C a revision
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr) sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 3 | p a g e overview this section gives an overview of the 512m sdram product and describes its main characterist ics. features ? 4 banks x 8mbit x 16 organization ? high speed data transfer rates up to 166 mhz ? full synchronous dynamic ram, with all signals referenced to clock rising edge ? single pulsed ras interface ? data mask for read/write control ? four banks con trolle d by ba0 & ba1 ? programmable cas latency: 2, 3 ? programmable wrap sequence: sequential or interleave ? programmable burst length: ? 1, 2, 4, 8 and full page for sequential type 1, 2, 4, 8 for interleave type ? multiple burst read with single write operation ? automatic and controlled pre - charge command ? random column address every clk (1 - n rule) ? power down mode ? auto refresh and self refresh ? refresh interval: 8192 cycles/64 ms ? available in 54 pin tsop ii ? lvttl interface ? si ngle +3.3 v 0.3 v power supply ? rohs compliant*
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr) sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 4 | p a g e table 1 - performance table - 7 system frequency (f ck ) 143 mhz clock cycle time (t ck3 ) 7 ns clock access time (t ac3 ) cas latency = 3 5.4 ns clock access time (t ac2 ) cas latency = 2 6 ns description the AS4C32M16SA is a four bank synchronous dram organized as 4 banks x 8mbit x 16. the AS4C32M16SA achieves high speed data transfer rates up to 166 mhz by employing a chip architecture that prefetches multiple bits and then synchro nizes the output data to a system clock. all of the control, address, data input and output circuits are synchronized with the positive edge of an externally supplied clock. operating the four memory banks in an i nter - leaved fashion allows random access operation to occur at higher rate than is possible with standard drams. a sequential and gapless data rate of up to 166 mhz is possible depending on burst length, cas latency and speed grade of the device. table 2 C ordering information for rohs compliant products product part no org temperature max clock (mhz) package AS4C32M16SA - 7tcn 32 x 16 commercial 0c to 70c 143 54pin tsop ii AS4C32M16SA - 7tin 32 x 16 industrial - 40c to 85c 143 54pin tsop ii
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr) sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 5 | p a g e
AS4C32M16SA version 2.0 512mbit sing le - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 6 | p a g e
AS4C32M16SA version 2.0 512mbit sing le - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 7 | p a g e
AS4C32M16SA version 2.0 512mbit sing le - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 8 | p a g e
AS4C32M16SA version 2.0 512mbit sing le - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 9 | p a g e power on and initialization the default power on state of the mode register is supplier specific and may be undefined. the following power on and initialization sequence guarantees the device is preconditioned to each users specific needs. like a conventional dram, the synchronous d ram must be powered up and initialized in a predefined manner. during power on, all vcc and vccq pins must be built up simultaneously to the specified voltage when the input signals are held in the nop state. the power on voltage must not exceed vcc+0.3v on any of the input pins or vcc supplies. the clk signal must be started at the same time. after power on, an initial pause of 200 ms is required followed by a precharge of both banks using the precharge command. to prevent data contention on the dq bus d uring power on, it is required that the dqm and cke pins be held high during the initial pause period. once all banks have been precharged, the mode register set command must be issued to initialize the mode register. a minimum of two auto refresh cycles ( cbr) are also required. these may be done before or after programming the mode register. failure to follow these steps may lead to unpredictable start - up modes. programming the mode register the mode register designates the operation mode at the read or w rite cycle. this register is di vided into 4 fields. a burst length field to set the length of the burst, an addressing selection bit to program the colum n access sequence in a burst cy cle (interleaved or sequential), a cas latency field to set the access time at clock cycle and a opera tion mode field to differentiate between normal op eration (burst read and burst write) and a special burst read and single write mode. the mode set operation must be done before any activate command after the initial power u p. any content of the mode register can be altered by re - executing the mode set command. all banks must be in pre - charged state and cke must be high at least one clock before the mode set operation. after the mode register is set, a stand by or nop comm an d is required. low signals of ras, cas, and we at the positive edge of the clock activate the mode set operation. address input data at this timing defines parameters to be set as shown in the previous table. read and write operation when ras is low and bo th cas and we are high at the positive edge of the clock, a ras cycle starts. according to address data, a word line of the selected bank is activated and all of sense ampl ifiers associated to the word line are set. a cas cycle is triggered by setting ras h igh and cas low at a clock timing a fter a necessary delay, t rcd , from the ras timing. we is use d to define either a read (we = h) or a write (we = l) at this stage. sdram provides a wide variety of fast access modes. in a single cas cycle, serial data read or write operations are allowed at up to a 166 mhz data rate. the numbers of serial data bits are the burst length programmed at the mode set operation, i.e., one o f 1, 2, 4, 8 and full page. column addresses are segmented by the burst length and serial data accesses are done within this boundary. the first column address to be accessed is supplied at the cas timing and the subsequent addresses are generated automati cally by the programmed burst length and its sequence. for example, in a burst length of 8 with interleave sequence; if the first ad - dress is 2, then the rest of the burst sequence is 3, 0, 1, 6, 7, 4, and 5. full page burst operation is only possible using sequential burst type. full page burst operation does not terminate once the burst length has been reached. (at the end of the pa ge, it will wrap to the start address and continue.) in other words, unlike burst length of 2, 4, and 8, full page burst continues until it is terminated using another command.
AS4C32M16SA version 2.0 512mbit sing le - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 10 | p a g e similar to the page mode of conventional drams, burst read or write accesse s on any column address are possible once the ras cycle latches the sense amplifiers. the maximum t ras or the refresh interval time limits the number of random column accesses. a new burst access can be done even before the previous burst ends. the interrupt operation at every clock cycles is supported. when the previous burst is interrupted, the remaining addresses are overridden by the new address with the full burst length. an interrupt which ac - companies with an operation change from a read to a write is possible by exploiting dqm to avoid bus con tention. when two or more banks are activated sequentially, interleaved bank read or write operations are possible. with the programmed burst length, alternate access and precharge operations on two or more banks can realize fast serial data access modes among many different pages. once two or more ba nks are activated, column to column interleave operation can be done between different pages.
AS4C32M16SA version 2.0 512mbit sing le - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 11 | p a g e
AS4C32M16SA version 2.0 512mbit sing le - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 12 | p a g e
AS4C32M16SA version 2.0 512mbit sing le - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 13 | p a g e
AS4C32M16SA version 2.0 512mbit sing le - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 14 | p a g e recommended operation and characteristics for lv - ttl v ss = 0 v; v cc , v ccq = 3.3 v 0.3 v limit values parameter symbol min. max. unit notes input high voltage v ih 2.0 vcc+0.3 v 1, 2 input low voltage v il C 0.3 0.8 v 1, 2 output high voltage (i out = C 4.0 ma) v oh 2.4 C v output low voltage (i out = 4.0 ma) v ol C 0.4 v input leakage current, any input i i(l) C 2 2 ua (0 v < v in < 3.6 v, all other inputs = 0 v) output leakage current i o(l) C 2 2 ua (dq is disabled, 0 v < v out < v cc ) note: all voltages are referenced to v ss . v ih may overshoot to v cc + 2.0 v for pulse width of < 4ns with 3.3v. v il may undershoot to - 2.0 v for pulse width < 4.0 ns with 3.3v. pulse width measured at 50% points with amplitude measured peak to dc reference.
AS4C32M16SA version 2.0 512mbit sing le - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 15 | p a g e operating currents v cc = 3.3 v 0.3 v ( recommended operating conditions unless otherwise noted ) max. symbol parameter & test condition - 7 unit note icc1 operating current 1 bank operation 240 ma 1 t rc = t rcmin. , t rc = t ckmin . active - precharge command cycling, without burst operation icc2p precharge standby current t ck = min. 7 ma 1 in power down mode icc2ps t ck = infinity 5 ma 1 cs =v ih , cke v il(max) icc2n precharge standby current t ck = min. 58 ma in non - power down mode icc2ns t ck = infinity 48 ma cs =v ih , cke v il(max) icc3n no operating current cke v ih(min.) 75 ma t ck = min, cs = v ih(min) icc3p cke v il(max.) 35 ma bank ; active state ( 4 banks) (power down mode) icc4 burst operating current 170 ma 1,2 t ck = min read/write command cycling icc5 auto refresh current 160 ma 1 t ck = min auto refresh command cycling icc6 self refresh current 6 ma self refresh mode, cke 0.2v notes: these parameters depend on the cycle rate and these values are measured by the cycle rate under the minimum value of t ck and t rc . input signals are changed one time during t ck . these parameter depend on output loading. specified values are obtained with output open.
AS4C32M16SA version 2.0 512mbit sing le - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 16 | p a g e ac characteristics 1,2, 3 v ss = 0 v; v cc = 3.3 v 0.3 v, t t = 1 ns limit values - 7 # symbol parameter min. max. unit note clock and clock enable 1 t ck clock cycle time cas latency = 3 7 C ns cas latency = 2 10 C ns 2 t ck clock frequency cas latency = 3 C 143 mhz cas latency = 2 C 100 mhz 3 t ac access time from clock 2, 3 cas latency = 3 C 5.4 ns cas latency = 2 C 6 ns 4 t ch clock high pulse width 2.5 C ns 5 t cl clock low pulse width 2.5 C ns 6 t t transition time 0.3 1.5 ns setup and hold times 7 t is input setup time 1.5 C ns 4 8 t ih input hold time 0.8 C ns 4 9 t cks cke setup time 1.5 C ns 4 10 t ckh cke hold time 0.8 C ns 4 11 t mrd mode register set command cycle time 2 C clk 12 t sb power down mode entry time 0 7 ns 13 t ds data - in setup time 1.5 C ns 14 t dh data - in hold time 0.8 C ns
AS4C32M16SA version 2.0 512mbit sing le - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 17 | p a g e common parameters 15 t rcd row to column delay time 15 C ns 5 16 t rp row precharge time 15 C ns 5 17 t ras row active time 45 100k ns 5 18 t rc row cycle time 65 C ns 5 19 t rrd activate(a) to activate(b) command period 15 C ns 5 20 t ccd cas(a) to cas(b) command period 1 C clk 21 t dpl data - in to precharge command for manual precharge 2 C clk refresh cycle 22 t ref refresh period (8192 cycles) 64 ms 23 t srex self refresh exit time 1 clk read cycle limit values - 7 # symbol parameter min. max. unit note 24 t oh data out hold time 2.5 C ns 2 25 t lz data out to low impedance time 1 C ns 26 t hz data out to high impedance time 3 7 ns 6 27 t dqz dqm data out disable latency C 2 clk write cycle 28 t wr write recovery time for auto precharge 2 C clk 29 t dqw dqm write mask latency 0 C clk
AS4C32M16SA version 2.0 512mbit sing le - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 18 | p a g e notes for ac parameters: 1. for proper power - up see the operation section of this data sheet. 2. ac timing tests have v il = 0.4v and v ih = 2.4v with the timing referenced to the 1.4 v crossover point. the transition time is measured between v ih and v il . all ac measurements assume t t = 1ns with the ac output load circuit shown in figure 1. tck clk tis tih command tlz output vih vil + 1.4 v t t 50 ohm 1.4v z=50 ohm tac tac i/o toh 50 pf 1.4v thz figure 1. 3. if clock rising time is longer than 1 ns, a time (t t /2 C 0.5) ns has to be added to this parameter. 4. if t t is longer than 1 ns, a time (t t C 1) ns has to be added to this parameter. 5. these parameter account for the number of clock cycle and depend on the operating frequency of the clock, as follows: the number of clock cycle = specified value of timing period (counted in fractions as a whole number) self refresh exit is a synchronous operation and begins on the 2nd positive clock edge after cke returns high. self refresh exit is not complete until a time period equal to trc is satisfied once the self refresh exit command is registered. 6. referenced to the time which the output achieves the open circuit condition, not to output vo ltage levels.
AS4C32M16SA version 2.0 512mbit sing le - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 19 | p a g e
AS4C32M16SA version 2.0 512mbit sing le - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 20 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 21 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 22 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 23 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 24 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 25 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 26 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 27 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 28 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 29 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 30 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 31 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 32 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 33 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 34 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 35 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 36 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 37 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 38 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 39 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 40 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 41 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 42 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 43 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 44 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 45 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 46 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 47 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 48 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 49 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 50 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 51 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 52 | p a g e package diagram
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 53 | p a g e
AS4C32M16SA version 2.0 512mbit single - data - rate (sdr)sdram 32mx16 (8m x 16 x 4 banks) alliance memory inc. reserves the rights to change the specifications and products without notice. alliance memory, inc., 551 taylor way, suite #1, san carlos, ca 94070, usa tel: +1 650 610 6800 fax: +1 650 620 9211 54 | p a g e

▲Up To Search▲

Price & Availability of AS4C32M16SA

	To Download AS4C32M16SA Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .